| PART |
Description |
Maker |
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| MN414170SJ-08 MN4117400TTR-08 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
4M X 4 FAST PAGE DRAM, 80 ns, PDSO24
|
PANASONIC CORP
|
| AS4C256K16FO |
5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| HT45 |
256K X 16 FAST PAGE DRAM, 45 ns, PDSO40
|
MOSEL-VITELIC
|
| MN414170CTT |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
|
PANASONIC CORP
|
| UPD424190ALE-70 UPD424190AG5M-70 |
256K X 18 FAST PAGE DRAM, 70 ns, PDSO40
|
|
| MT3D2569MP-7 MT3D2569MPL-8 |
256K X 9 FAST PAGE DRAM MODULE, 70 ns, SMA30
256K X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30
|
|
| V104J9SU80 V104J9SU80L |
256K X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30
|
MOSEL-VITELIC
|
| KM44C256A |
256k x 4Bit CMOS DRAM with Fast Page Mode
|
Samsung Electronics
|
| HYB3116400BJ-60 HYB3116400BJ-50 HYB3117400BJ-50 HY |
3.3V 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, TSOP2-26/24
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, SOJ-26/24
|
SIEMENS AG
Infineon Technologies AG
http://
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
